{"id":236,"date":"2023-07-01T11:05:03","date_gmt":"2023-07-01T02:05:03","guid":{"rendered":"https:\/\/www.skp-tirec.com\/?page_id=236"},"modified":"2023-07-24T13:20:45","modified_gmt":"2023-07-24T04:20:45","slug":"research-achievement","status":"publish","type":"page","link":"https:\/\/www.skp-tirec.com\/?page_id=236","title":{"rendered":"Research Achievement"},"content":{"rendered":"\n
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List\u3000of reports, papers, and patents : Ph.D\u3000Satoru Kishida<\/p>\n\n\n\n

Main Research Theme (M.R.T.)  <\/p>\n\n\n\n

[A] : Crystal-Growth and Solid State Physics in II-VI Compound, especially ZnS, ZnSe and so on.<\/p>\n\n\n\n

[B] : Crystal-Growth, Devices-Fabrication and Surface-Analysis of High-Tc Superconducting Oxides and Re-RAM<\/p>\n\n\n\n

[C] : Application of Neural Networks<\/p>\n\n\n\n

[D] : Others<\/p>\n\n\n\n

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\n
No.<\/td>M.R.T<\/td>Title of Paper or Report<\/td>Name of Journal, Vol., No., pp., Year<\/td><\/tr>
1<\/td>A<\/td>Temperature Dependence of the Half-Width of the 2.3eV Optical Absorption Band in Neutron-Irradiated ZnS<\/td>phys. stat. sol. (a), Vol.35, pp.K57-K60(1976).  <\/td><\/tr>
2<\/td>A<\/td>Near-infrared emissions in additively colored or neutron-irradiated ZnS<\/td>Inst. Phys. Conf. Ser. No.31, 1977, pp.418-425.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
8<\/td>A<\/td>Optical Absorption Bands in Neutron-Irradiated ZnSe and ZnS0.5Se0.5 Crystals<\/td>phys. stat. sol. (b) 113(1982)K31-K33.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
13<\/td>A<\/td>The Photosensitive Optical Absorption Bands in Zn-Treated and Neutron-Irradiated ZnSe Single Crystals<\/td>phys. stat. sol. (a)\u300095(1986)155-164.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
19<\/td>D<\/td>Circuit for extension of an interrupt input of a personal computer PC8001mkII<\/td>Rev. Sci. Instrum.  58(1987)142-143.<\/td><\/tr>
20<\/td>A<\/td>Annealing of the F\uff0b-EPR Centers and the 2.3 and 2.9eV Optical Absorption Bands in Zinc Sulfide Crystals<\/td>phys. stat. sol. (b)  140(1987)347-354..<\/td><\/tr>
21<\/td>A<\/td>Correlation between the 1.1 and 1.45eV Emission Bands and the F\uff0bOptical Absorption  Bands in ZnS Crystals<\/td>phys. stat. sol. (b)  143(1987)275-280.<\/td><\/tr>
22<\/td>A<\/td>Optical Bleaching of the F\uff0bOptical Bands in ZnS Crystals<\/td>phys. stat. sol. (b)  142(1987)617-627.<\/td><\/tr>
23<\/td>A<\/td>Electron-Irradiation Effects on the F\uff0bBands and the Near-Infrared Emissions ZnS Crystals<\/td>phys. stat. sol. (b)  142(1987)K79-K83.<\/td><\/tr>
24<\/td>A<\/td>Annealing Characteristics and Temperature Dependence of the Photosensitive 1.9eV  Absorption Bands in the Zn-Treated ZnSe  Crystals<\/td>phys. stat. sol. (a)  103(1987)613-618.<\/td><\/tr>
25<\/td>A<\/td>Cross-Section for Atomic Displacement in II-VI Compounds by Gamma Particles<\/td>Rep. Fac. Engng. Tottori Univ. Vol.18, No.1(1987)47-54.<\/td><\/tr>
26<\/td>A<\/td>The 2.5eV Emission Band in the Se-Treated ZnSe Crystals<\/td>phys. stat. sol. (a) 106(1988)283-289.<\/td><\/tr>
27<\/td>A<\/td>The Transient Behaviors of the 2.5eV Emission Band in the Se-Treated ZnSe Crystals<\/td>phys. stat. sol. (a) 105(1988)K165-K168.<\/td><\/tr>
28<\/td>A<\/td>Temperature Dependence of the 2.5eV Emission Band in Se-Treated ZnSe Crystals<\/td>phys. stat. sol. (a) 109(1988) 617-623.<\/td><\/tr>
29<\/td>B<\/td>Effects of Water on the Resistance-Temperature Characteristics of YBa2Cu3O7-y   Oxides<\/td>Jpn. J. Appl. Phys.  Vol.27, (1988) L1616-L1619.<\/td><\/tr>
30<\/td>B<\/td>Effects of Preparation Conditions and Mechanical Polishings on the Superconducting  Behavior of High-Tc Oxide YBa2Cu3O7-y<\/td>Jpn. J. Appl. Phys.  Vol.27, (1988) L325-L328.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
40<\/td>B<\/td>Surface Analysis of YBa2Cu3Ox and Bi-Sr-Ca-Cu-O Superconductors by Auger Electron Spectroscopy<\/td>Jpn. J. Appl. Phys.\u3000Vol.28(1989) L222-L225.<\/td><\/tr>
41<\/td>B<\/td>LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces<\/td>Jpn. J. Appl. Phys.\u3000Vol.28(1989) L406-408<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
45<\/td>B<\/td>XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces<\/td>Jpn. J. Appl. Phys.\u3000Vol.28, (1989) L949-L951.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
47<\/td>B<\/td>LEED-AES Observations of 7K- and 80K-phase Bi-Sr-Ca-Cu-O Single Crystals<\/td>Jpn. J. Appl. Phys.\u3000Vol.28, (1989) L1389-L1392.<\/td><\/tr>
48<\/td>B<\/td>\u9178\u5316\u7269\u9ad8\u6e29\u8d85\u4f1d\u5c0e\u4f53\u306eXPS\u306b\u3088\u308b\u7814\u7a76<\/td>\u6750\u6599\u6280\u8853\u30007 \u5dfb 8 \u53f7(1989)287-293.<\/td><\/tr>
49<\/td>B<\/td>rf \u30de\u30b0\u30cd\u30c8\u30ed\u30f3\u30b9\u30d1\u30c3\u30bf\u6cd5\u306b\u3088\u308b Bi-Sr-Ca-Cu-O \u8584\u819c\u306e\uff38\uff30\uff33\u306b\u3088\u308b\u7814\u7a76<\/td>\u771f\u7a7a\u300032 \u5dfb 11 \u53f7(1989)808-811.<\/td><\/tr>
50<\/td>B<\/td>\u9178\u5316\u7269\u8d85\u96fb\u5c0e\u5358\u7d50\u6676\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u958b\u5e737-232997<\/td><\/tr>
51<\/td>B<\/td>THE PREPARATION CONDITIONS AND CHARACTERISTICS OF THE Bi-Sr-Ca-Cu-O SINGLE CRYSTALS<\/td>J.Crystal Growth\u300099(1990) 937-941.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
53<\/td>B<\/td>XPS Studies of 80K-Phase Bi-Sr-Ca-Cu-O Single Crystals<\/td>Jpn. J. Appl. Phys. Vol.29(1990) L438-L440.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
62<\/td>B<\/td>PREPARATION CONDITIONS OF 80K-PHASE Bi(Pb)-Sr-Ca-Cu-O SINGLE CRYSTALS<\/td>Proc. 3rd Int. Symposium on Super-conductivity (ISS’90), Nov. 6-9, 1990, Sendai, pp.781-784<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
66<\/td>B<\/td>LEED-AES OBSERVATIONS OF THE VACUUM-CLEAVED Bi-Sr-Ca-Cu-O SINGLE   CRYSTALS<\/td>Surface Science 242(1991)50-53.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
68<\/td>B<\/td>FORMATION OF INSULATING LAYERS ON 80K-PHASE Bi-BASED SINGLE  CRYSTALS<\/td>3th FED WORKSHOP on HiTcSc-ED ( Reserach & Development for Future Electron  Devices, Kumamoto, 1991) pp.88-89.<\/td><\/tr>
69<\/td>B<\/strong><\/td>THE PREPARATION CONDITIONS OF THE FLAT 80K-PHASE Bi-Sr-Ca-Cu-O THIN FILMS BY RF MAGNETRON SPUTTERING<\/td>Applied Surface Science 48\/49(1991)446-449.<\/td><\/tr>
70<\/td>B<\/strong><\/td>SURFACE STUDY OF SINGLE CRYSTAL 80K Bi-Sr-Ca-Cu-O SUPERCONDUCTOR  WITH Si AND Nb BY RHEED AND XPS DEPTH PROFILE<\/td>Applied Surface Science 48\/49(1991) 450-453<\/td><\/tr>
71<\/td>B<\/td>SURFACE CHARACTERIZATIONS OF Bi-Sr-Ca-Cu-O THIN FILMS AND BULK  SINGLE CRYSTALS<\/td>Applied Surface Science 48\/49(1991) 425-429.<\/td><\/tr>
72<\/td>B<\/td>The Preparations of 110K Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Ceramics  in Various Oxygen-Reduced Atmospheres<\/td>phys. stat. sol. (a), 124(1991)K117-K121.<\/td><\/tr>
\u2026<\/td> <\/td>\uff0aPhysica C : 4 papers<\/td> <\/td><\/tr>
79<\/td>B<\/td>GROWTH OF 80K-PHASE (Bi,Pb)-(Sr,Ca)-Cu-O BULK SINGLE CRYSTALS USING  THE FLUX CONTAINING Li OR Sb<\/td>Physica C 190(1991)110-110.<\/td><\/tr>
\u2026<\/td> <\/td>\uff0a\u771f\u7a7a\uff0cVol.34, No.3, 6 papers<\/td> <\/td><\/tr>
93<\/td>B<\/strong><\/td>Formation of Au Electrodes on 80K-Phase Bi-Sr-Ca-Cu-O Single Crystal Surfaces and Their Characteristics by XPS<\/td>IEICE TRANSACTIONS, Vol.E74, No.7(1991)1967-1971.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
108<\/td>B<\/td>Observation of Josephson Junctionlike Behavior in Single-Crystal (Bi,Pb)2Sr2CaCu2Oy<\/td>Jpn. J. Appl. Phys. Vol.31, No.7A (1992) pp.L829-L831<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
119<\/td>B<\/td>Effects of YBa2Cu3Oy Doping into Bi2Sr2CaCu2Ox on Superconducting Properties<\/td>phys. stat. sol.(a)  Vol.137 (1993) pp.173-178.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
125<\/td>B<\/td>Preparation of As-Deposited 80K-Phase Bi-Sr-Ca-Cu-O Films by RF Magnetron Sputtering<\/td>Jpn. J. Appl. Phys. Vol.32, Suppl.32-3(1993), pp.700-702.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
128<\/td>B<\/td>Crystal Growth of Bi-Sr-Ca-Cu-O (c0=39A) Single Crystals<\/td>Jpn. J. Appl. Phys. Vol.32, Part 2, No.3B(1993)pp.L398-L399.<\/td><\/tr>
\u2026<\/td> <\/td>6th<\/sup> ISS93 Proceedings : 5 papers<\/td> <\/td><\/tr>
139<\/td>B<\/td>Effects of Doping the Pb-Oxides into Bi-Sr-Ca-Cu-O Superconductors<\/td>Proc. of 6th ISS’93, Oct. 26-29, 1993, Hiroshima (Adv. in Supercon. VI), pp.343-346.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
149<\/td>C, B<\/td>\u30cb\u30e5\u30fc\u30ed\u30b3\u30f3\u30d4\u30e5\u30fc\u30c6\u30a3\u30f3\u30b0\u306b\u3088\u308b\u5316\u5b66\u5206\u6790\u306e\u77e5\u80fd\u5316\u3000\uff0d\uff38\u7dda\u5149\u96fb\u5b50\u5206\u5149\u5206\u6790\u3078\u306e\u5fdc\u7528\uff0d<\/td>\u8868\u9762\u79d1\u5b66\u3000Vol.15, No.3(1994)pp.168-174.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
163<\/td>B<\/td>Effects of the Preparation Conditions of Bi-Based Superconducting Ceramics on  Superconductivity<\/td>phys. stat. sol.(a),  Vol.148,(1995)  pp.537-543.<\/td><\/tr>
164<\/td>B<\/td>Effects of Temperatures and Periods for Melting on Growth of Bi2Sr2CaCu2Oy Single Crystals<\/td>J. Crystal Growth Vol.153(1995) pp.146-150.<\/td><\/tr>
165<\/td>B<\/td>Effects of Cooling Rates and Temperatures Ending the Growth on Bi2Sr2CaCu2Oy  Single Crystal Growth<\/td>phys. stat. sol.(a)  Vol.151(1995) pp.17-22.<\/td><\/tr>
166<\/td>B<\/td>Deteriorated Layer Formed on Bi2Sr2CaCu2Oy  Single Crystal Surfaces<\/td>phys. stat. sol.(a)  Vol.151(1995) pp.387-392.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
181<\/td>B<\/td>Bi2Sr2CaCu2Oy  \u5358\u7d50\u6676\u306e\u78c1\u675f\u91cf\u5b50\u89b3\u5bdf<\/td>Trans.IEE of Japan A, Vol.115, No.3 (1995)pp.207-212.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
190<\/td>B<\/td>\u4f4e\u901f\u96fb\u5b50\u7dda\u56de\u6298\u53ca\u3073\u9ad8\u901f\u96fb\u5b50\u7dda\u56de\u6298\u306b\u3088\u308b\u56fa\u4f53\u8868\u9762\u306e\u69cb\u9020\u89e3\u6790<\/td>J. Surface Analysis, Vol.2, No.2, pp.229-235 (1996).<\/td><\/tr>
191<\/td>B<\/td>XPS\u6cd5\u306b\u3088\u308a\u8a55\u4fa1\u3057\u305f\u5927\u6c17\u4e2d\u52a0\u71b1\u306b\u3088\u308b\u7cfb\u9178\u5316\u7269\u8d85\u4f1d\u5c0e\u4f53\u306e\u6e05\u6d44\u5316<\/td>J. Surface Analysis,  Vol.2, No.2, pp.290 (1996).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
199<\/td>B<\/td>Effects of He Gas Addition on the Production of Active Particles in rf Magnetron Sputtering<\/td>Jpn. J. Appl. Phys.  Vol.35, Part1, No.6A, pp.3590-3594(1996).<\/td><\/tr>
200<\/td>C<\/td>\u30b3\u30db\u30cd\u30f3\u8457\u300c \u81ea\u5df1\u7d44\u7e54\u5316\u30de\u30c3\u30d7 \u548c\u8a33<\/td>\u30b7\u30e5\u30d7\u30ea\u30f3\u30ac\u30fc\u30fb\u30d5\u30a7\u30a2\u30e9\u30fc\u30af\u6771\u4eac\uff0c1996\u5e746\u670815\u65e5\uff0c3800\u5186<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
202<\/td>B<\/td>Effects of O2+  and O+ on the Growth of BiSrCaCuO Superconducting Films in rf Magnetron  Sputtering<\/td>Jpn. J. Appl. Phys., Vol.35, Part 1, No.8A(1996)pp.4297-4301<\/td><\/tr>
203<\/td>D<\/td>Ar\u30a4\u30aa\u30f3\u30bd\u30d5\u30c8\u30a8\u30c3\u30c1\u30f3\u30b0 \u3092\u7528\u3044\u305f\u5fae\u7d30\u63a5\u7d9a\u5b54\u5185\u306e\u81ea\u7136\u9178\u5316\u819c\u9664\u53bb\u52b9\u679c<\/td>\u771f\u7a7a, Vol.39, No.10, pp.497-503(1996).<\/td><\/tr>
204<\/td>B<\/td>Effects of Bi2Sr2CaCu2Oy Single Crystal Surfaces on Contact Resistance<\/td>Jpn. J. Appl. Phys., Vol.35, Part 1, No.10(1996)pp.5299-5303.<\/td><\/tr>
205<\/td>B<\/td>Bi-Sr-Ca-Cu\u9178\u5316\u7269\u8d85\u96fb\u5c0e\u4f53\u3078\u306ePb\u9178\u5316\u7269\u6dfb\u52a0\u52b9\u679c<\/td>\u4f4e\u6e29\u5de5\u5b66\uff0cVol.31, No.12(1996)\u3000pp.646-652.<\/td><\/tr>
206<\/td>C<\/td>\u6c4e\u5316\u80fd\u529b\u5411\u4e0a\u306e\u305f\u3081\u306e\u968e\u5c64\u578b\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u6761\u4ef6\u4ed8\u304d\u4ed8\u52a0\u9805<\/td>\u4fe1\u5b66\u6280\u5831\uff0cVol.NC96-173(1997)\u3000pp.139-144.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
210<\/td>B<\/td>Effect of Preparation Conditions on the Growth of Bi-based Superconducting Single Crystals<\/td>Physica C, Vol.282-287, pp.473-474\u3000(1997).<\/td><\/tr>
211<\/td>B<\/td>Growth of Bi2Sr2Can-1CunOy Single Crystals in Oxygen-Reduced Atmospheres<\/td>Physica C, Vol.282-287, pp.477-478\u3000(1997).<\/td><\/tr>
212<\/td>D<\/td>Characteristics of Sputtered TiN Films by Optimized Metallic Mode Deposition<\/td>Jpn. J. Appl. Phys., Vol.36, Part 1, No.2(1997)\u3000pp.556-600<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
218<\/td>B<\/td>Growth of Bi2Sr2CaCu2Oy Single Crystals Using a Vertical Bridgman Method<\/td>Jpn. J. Appl. Phys., Vol.36, Part 2, No.6B(1997)pp.L761-L763.<\/td><\/tr>
219<\/td>B<\/td>\u96fb\u5b50\u5206\u5149\u6cd5\u306b\u3088\u308b\u9178\u5316\u30b7\u30ea\u30b3\u30f3\u6e2c\u5b9a\u6642\u306e\u30c0\u30e1\u30fc\u30b8\u306b\u3064\u3044\u3066<\/td>\u8868\u9762\u79d1\u5b66, Vol.18, No.8, pp.21-25(1997).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
224<\/td>B<\/strong><\/td>Optimum Growth Condition of Bi2Sr2CaCu2Oy  Single Crystals in a Vertical Bridgman Method<\/td>J. Crystal Growth, Vol.192, pp.136-140(1998).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
229<\/td>B<\/td>Growth of Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman method and their characterization<\/td>J. Crystal Growth, Vol.182, No.1-2,\u3000pp.60-64(1998).<\/td><\/tr>
230<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u5b9a\u91cf\u5206\u6790\u3078\u306e\u9069\u7528<\/td>\u8868\u9762\u79d1\u5b66, Vol.19, No.2, pp.98-105(1998).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
235<\/td>B<\/td>Surface of Bi2Sr2CaCu2Oy Single Crystals Heated in Air<\/td>Jpn. J. Appl. Phys., Vol.4, No.4A, pp.2024-2027(1998).<\/td><\/tr>
236<\/td>B<\/td>XPS Study of Junction Interface in In\/BaRbBiO Films<\/td>Jpn. J. Appl. Phys., Vol.37, No.5A, pp.2482-2484(1998).<\/td><\/tr>
237<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u5316\u5b66\u5206\u6790\u3078\u306e\u9069\u7528<\/td>\u8868\u9762\u79d1\u5b66, Vol.19, No.6, pp.46-54(1998).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
246<\/td>B<\/td>Growth of Bi2Sr2CaCu2Oy  by a Self-Flux Method Using Precursors<\/td>J. Crystal Growth, Vol.205, pp.284-288(1999).<\/td><\/tr>
247<\/td>C<\/td>GROWTH of Bi-BASED WHISKERS AND THEIR CHARACTERIZATION<\/td>Singapore J.Physics, Vol.15, No.1, 1999, pp.101-106.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
253<\/td>B<\/td>Submicron scale High-Tc superconducting stacks for single Cooper-pair tunneling<\/td>Physica B, Vol.284-8, pp.1814-1815, 2000.<\/td><\/tr>
254<\/td>B<\/td>Growth of large Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman method<\/td>J. Crystal Growth, Vol.216, pp.220-224(2000).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
259<\/td>D<\/td>\u5782\u76f4\u30d6\u30ea\u30c3\u30b8\u30de\u30f3\u6cd5\u306b\u3088\u308bBi2Sr2CaCu2Oy\u5358\u7d50\u6676\u306e\u6700\u9069\u80b2\u6210\u6761\u4ef6<\/td>\u9ce5\u53d6\u5927\u5b66\u5b66\u5831\uff0c\u7b2c138\u53f7\uff0cpp.10-12(2000).\u3000 \uff0a\u9ce5\u53d6\u5927\u5b66\u30fb\u79d1\u5b66\u7814\u7a76\u696d\u7e3e\u8868\u5f70<\/td><\/tr>
260<\/td>D<\/td>\u5bb6\u65cf\u3068\u904e\u3054\u3057\u305f\u30b1\u30f3\u30d6\u30ea\u30c3\u30b8\u304b\u3089\u2026<\/td>\u9ce5\u53d6\u5927\u5b66\uff62\u8466\uff63\uff0c\u7b2c35\u53f7\uff0cpp.8-12(2000).<\/td><\/tr>
261<\/td>C<\/td>\u8868\u9762\u79d1\u5b66\u6280\u8853\u8cde<\/td>\u65e5\u672c\u8868\u9762\u79d1\u5b66\u4f1a<\/td><\/tr>
262<\/td>B<\/td>Fabrication of Ultra-small and Long Intrinsic Josephson Junctions on Bi-2212 Single Crystal Whiskers<\/td>IEEE Trans. On Applied Superconductivity, Vol.11, No.1, pp.948-951(2001).<\/td><\/tr>
263<\/td>B<\/td>Growth of La-doped Bi2Sr2CaCu2Oy Single Crystals by a self-flux method<\/td>Physica C , Vol.357-360, pp.716-718(2001).<\/td><\/tr>
264<\/td>B<\/td>X-ray photoelectron spectroscopy studies of La-doped Bi2Sr2CaCu2Oy Single Crystals<\/td>Physica C,  Vol.357-360, pp.410-413(2001).<\/td><\/tr>
265<\/td>B<\/td>Growth of Bi2Sr2CaCu2Oy Single Crystals By A Modified Vertical Bridgman Method<\/td>Physica C , Vol.357-360, pp.722-725(2001).<\/td><\/tr>
266<\/td>B<\/td>Annealing Characteristics of  Bi2Sr2CaCu2Oy Single Crystals Grown By A Vertical Bridgman Method<\/td>Physica C , Vol.357-360, pp.821-823(2001).<\/td><\/tr>
267<\/td>B<\/td>Growth of  Bi2Sr2CaCu2Oy Single Crystals By A Self-Flux Method<\/td>Physica C , Vol.357-360, pp.719-721(2001).<\/td><\/tr>
268<\/td>B<\/td>Growth of La-doped Bi2Sr2CaCu2Oy Single Crystals by a self-flux method<\/td>Physica C , Vol.357-360, pp.716-718(2001).<\/td><\/tr>
269<\/td>B<\/td>Temperature Depenedence of the Surface Resistance of a Bi-Sr-Ca-Cu-O Whisker Measured by the Probe-Coupled Microstrip Resonator Method<\/td>Jpn. J. Appl. Phys., Vol.40, pp.L669-671(2001).<\/td><\/tr>
270<\/td>B<\/strong><\/td>\u8d85\u96fb\u5c0e\u3068\u74b0\u5883\u554f\u984c<\/td>\u9ce5\u53d6\u5927\u5b66\u30fb\u5b66\u52d9\u90e8\u3060\u3088\u308a, No.240, pp.4-6(2001).<\/td><\/tr>
271<\/td>B<\/strong><\/td>Growth of Bi2Sr2CaCu2Oy Superconducting Whiskers<\/td>Physica C, Vol.362, pp.195-199 (2001).<\/td><\/tr>
272<\/td>B<\/td>New Approach for Farbricating Submicron Scale Intrinsic Josephson Junctions using High-Tc Superconducting Materials<\/td>Physica C, Vol.362, pp.150-155 (2001).<\/td><\/tr>
273<\/td>B<\/td>Electrical Properties of Bi-2212 Whisker Using Ag Film Electrodes<\/td>Physica C , Vol.362, pp.333-337 (2001).<\/td><\/tr>
274<\/td>B<\/td>Junction area dependence of critical current density in Bi-2212 stacked junction<\/td>Supercond. Sci. Technol., Vol.14, pp.1102-1105 (2001).<\/td><\/tr>
275<\/td>D<\/td>\u9ce5\u53d6\u5927\u5b66\u3000\u6559\u80b2\u529f\u7e3e\u8cde<\/td>\u9ce5\u53d6\u5927\u5b66<\/td><\/tr>
276<\/td>B<\/td>Effect of in situ and ex situ annealing on the growth of Bi2Sr2Can-1CunOy sputtered films<\/td>Supercond. Sci. Technol., Vol.15, pp.472-474 (2002).<\/td><\/tr>
277<\/td>B<\/td>GROWTH AND CHARACTERIZATION OF Bi-BASED SUPERCONDUCTING  WHISKERS<\/td>Sing. J. Phys., Vol.18, No.1, pp.255-259(2002).<\/td><\/tr>
278<\/td>B<\/td>PREPARATION OF Bi2Sr2Can-1CunOy SUPERCONDUCTING SPUTTERED FILMS USING HELIUM GAS<\/td>Sing. J. Phys., Vol.18, No.1, pp.227-231(2002).<\/td><\/tr>
279<\/td>B<\/td>Growth of La Doped Bi2Sr2CaCu2Oy Single Crystals by a Self-Flux Method<\/td>J. Crystal Growth, Vol.237-239, pp.753-755 (2002)<\/td><\/tr>
280<\/td>B<\/td>Growth of large Bi2Sr2CaCu2Oy single crystals by a modified vertical Bridgman method<\/td>J. Crystal Growth, Vol.237-239, pp.749-752 (2002).<\/td><\/tr>
281<\/td>B<\/td>CHARACTERIZATIONS OF BI-BASED WHISKERS BY THE METHOD OF Al2O3-SEEDED GLASSY QUENCHED PLATELETS<\/td>International Journal of Modern Physics B, Vol.16, No.20, pp.4497-4501(2002).<\/td><\/tr>
\u2026<\/td>B<\/td>Physica C : 4 papers, Supercon. Sci. Technol., : 2 papers<\/td> <\/td><\/tr>
288<\/td>C<\/td>Application of neural networks to braille transcription<\/td>ICONIP\u201902 (9th Int. Conf. on Neural Information Processing), Nov.18-22, 2002, Orchard Country Club, Singapore<\/td><\/tr>
288<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306b\u3088\u308b\u5206\u304b\u3061\u66f8\u304d<\/td>\u4fe1\u5b66\u6280\u5831\uff0cNC2001-139\uff0cp.53-58(2002-3)\uff0e<\/td><\/tr>
290<\/td>C<\/td>\u70b9\u5b57\u5909\u63db\u30b7\u30b9\u30c6\u30e0\u3078\u306e\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u9069\u7528<\/td>\u4fe1\u5b66\u6280\u5831\uff0cDSP2002-20\uff0cp.19-23(2002-05)\uff0e<\/td><\/tr>
291<\/td>D<\/td>\u74b0\u5883\u306e\u306f\u306a\u3057 \u2015\u9ce5\u53d6\u767a\u30fb\u5730\u7403\u518d\u751f\u306e\u77e5\u6075\u2015<\/td>\u5bcc\u58eb\u66f8\u5e97\uff0c2002\u5e747\u670830\u65e5\u767a\u884c<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
296<\/td>D<\/td>\u4eba\u751f\u3092\u8c4a\u304b\u306b\u3059\u308b\u305f\u3081\u306b\u201d(\u5dfb\u982d\u8a00)<\/td>\u9ce5\u53d6\u5927\u5b66\u5b66\u52d9\u3060\u3088\u308a\uff0cNo\uff0e246, 2003.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
299<\/td>B<\/td>\u8d85\u4f1d\u5c0e\u4f53\u30db\u30a4\u30b9\u30ab\u30fc\u306e\u69cb\u9020\u89e3\u6790<\/td>\u6587\u90e8\u79d1\u5b66\u7701\u30ca\u30ce\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7dcf\u5408\u652f\u63f4\u30d7\u30ed\u30b8\u30a7\u30af\u30c8\u30fb\u5e73\u621014\u5e74\u5ea6\u30fb\u5b9f\u7e3e\u5831\u544a\u66f8\uff0cpp.86-89\uff0c2003\u5e74<\/td><\/tr>
300<\/td>B<\/td>Preparation of Bi2Sr2Can-1CunOy superconducting films by a rf magnetron sputtering method with multi-targets<\/td>Physica C, Vol.392-396, pp.1306-1309(2003).<\/td><\/tr>
301<\/td>B<\/td>XPS study on the Bi-2212 single crystals grown by a modified vertical Bridgman method<\/td>Physica C, Vol.392-396, pp.153-156(2003).<\/td><\/tr>
302<\/td>B<\/td>Effect of atmospheres on characterization of Bi-based superconducting whiskers<\/td>Physica C, Vol.392-396, pp.508-511(2003).<\/td><\/tr>
303<\/td>B<\/td>Growth mechanism of Bi-based superconducting whiskers<\/td>Physica C, Vol.392-396, pp.512-515(2003).<\/td><\/tr>
304<\/td>B<\/td>Improvement of superconductivity in Bi-2212 single crystals grown by a vertical Bridgman method<\/td>Physica C, Vol.392-396, pp.505-507(2003).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
307<\/td>B<\/td>Growth of Phase-Controlled Bi2Sr2Can-1CunOy Thin Films Prepared by Off-Axis Sputtering using He Gas<\/td>Jpn. J. Appl. Phys., Vol.42, pp.2671-2674(2003).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
311<\/td>B<\/td>\u30ca\u30ce\u30c7\u30d0\u30a4\u30b9\u7528\u8d85\u4f1d\u5c0e\u30a6\u30a3\u30b9\u30ab\u30fc\u306e\u5316\u5b66\u72b6\u614b\u5206\u6790<\/td>\u6587\u90e8\u79d1\u5b66\u7701\u30ca\u30ce\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7dcf\u5408\u652f\u63f4\u30d7\u30ed\u30b8\u30a7\u30af\u30c8SPring-8\u7814\u7a76\u6210\u679c\u5831\u544a\u66f8\uff0cpp\uff0e105-107\uff0c2004.<\/td><\/tr>
312<\/td>B<\/td>Chemical Properties of the Bi-based superconducting whiskers studied by X-ray photoelectron spectroscopy<\/td>Physica C, Vol.412-414, pp.279-282 (2004).<\/td><\/tr>
313<\/td>B<\/td>Growth mechanism of Bi-based whiskers in a method of Al2O3-seeded quenched glassy platelets<\/td>Physica C, Vol.408-410, pp.874-875 (2004).<\/td><\/tr>
314<\/td>B<\/td>Preparation of Bi-2223 Phase Superconducting Ceramics in Various Oxygen-reduced Atmosphere<\/td>Physica C, Vol.408-410, pp.889-890 (2004).<\/td><\/tr>
315<\/td>C<\/td>Effects of Preprocessing and Layered Neural Networks on Individual Identification<\/td>Proc of the 47th IEEE International Midwest Symposium on Circuits and Systems (25-28 July, 2004, Hiroshima, Japan), pp. III-73 – III-76, 2004<\/td><\/tr>
316<\/td>C<\/td>Application of Neural Networks to Japanese-to-Braille Translation<\/td>Proc of the 47th IEEE International Midwest Symposium on Circuits and Systems (25-28 July, 2004, Hiroshima, Japan), pp. III-109 \u2013 III-112, 2004<\/td><\/tr>
317<\/td>B<\/td>Preparation of Bi2Sr2Can-1CunOy thick films<\/td>Physica C , Vol.412-414, pp.1358-1361(2004).<\/td><\/tr>
318<\/td>B<\/td>Growth of high quality Bi2Sr2CaCu2Oy single crystals by modified vertical Bridgman method<\/td>Physica C , Vol.412-414, pp.607-609(2004).<\/td><\/tr>
319<\/td>B<\/td>Bi2Sr2Can-1CunOy thin films deposited using Bi-Sr-Cu-O and Ca-Cu-O targets<\/td>Transactions of the Materials Research Society of Japan, Vol.29, No.4, pp.1405-1408, 2004.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td>Other 3 papers in the same Journal<\/td><\/tr>
324<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u6307\u7d0b\u7167\u5408\u30b7\u30b9\u30c6\u30e0\u306e\u69cb\u7bc9<\/td>\u30cb\u30e5\u30fc\u30ed\u30b3\u30f3\u30d4\u30e5\u30fc\u30c6\u30a3\u30f3\u30b0\u7814\u7a76\u4f1a(\u7389\u5ddd\u5927\u5b66)\uff0c\u4fe1\u5b66\u6280\u5831\uff0cNC2003-146\uff0cpp.65-70\uff0c2004\u5e743\u670817\u65e5<\/td><\/tr>
325<\/td>C<\/td>\u70b9\u5b57\u7ffb\u8a33\u3078\u306e\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u9069\u7528<\/td>\u30cb\u30e5\u30fc\u30ed\u30b3\u30f3\u30d4\u30e5\u30fc\u30c6\u30a3\u30f3\u30b0\u7814\u7a76\u4f1a(\u7389\u5ddd\u5927\u5b66)\uff0c\u4fe1\u5b66\u6280\u5831\uff0cNC2003-172\uff0cpp.43-48\uff0c2004\u5e743\u670818\u65e5\uff0e<\/td><\/tr>
326<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u6307\u7d0b\u7167\u5408\u30b7\u30b9\u30c6\u30e0<\/td>\u975e\u7dda\u5f62\u554f\u984c\u7814\u7a76\u4f1a\uff0c\u4fe1\u5b66\u6280\u5831\uff0cNLP2004-14\uff5e23\uff0cpp.1-4\uff0c2004\u5e746\u670817\u65e5\uff0e<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
330<\/td>D<\/td>\u201d\u4f8b\u984c\u3067\u5b66\u3076\u96fb\u78c1\u6c17\u5b66\u201d\u5206\u62c5\u57f7\u7b46<\/td>\u68ee\u5317\u51fa\u7248\u3231<\/td><\/tr>
331<\/td>C<\/td>Improvement of Preprocessing Method on Fingerprint Identification System by Layered Neural Networks<\/td>Int. Workshop on Nonlinear Signal and Image Processing, (NSIP 2005), pp.217-220(2005).<\/td><\/tr>
332<\/td>B<\/td>Deposition of Bi2Sr2Can-1CunOy (Bi-based) Superconducting Thin Films by rf Magnetron Sputtering Method Under External Magnetic Field<\/td>IEEE Trans on Applied Superconductivity, Vol.15, No.2, pp.3074-3077(2005).<\/td><\/tr>
333<\/td>B<\/td>Enlargement Effect of the Crucible Size on Bi2Sr2CaCu2Oy Single Crystals Grown by a Modified Vertical Bridgman Method<\/td>IEEE Trans on Applied Superconductivity, Vol.15, No.2, pp.3133-3136(2005).<\/td><\/tr>
334<\/td>D<\/td>\u96fb\u6c17\u96fb\u5b50\u5de5\u5b66\u79d1\u306b\u304a\u3051\u308b\u6559\u80b2\u6539\u9769<\/td>\u5de5\u696d\u6559\u80b2\uff0cVol.53, No.3, pp.81-86(2005)<\/td><\/tr>
335<\/td>D<\/td>\u78c1\u6c17\u30b7\u30fc\u30c9\u6cd5\u306b\u3088\u308b\u8d64\u571f\u6fc1\u6c34\u306e\u56fa\u6db2\u5206\u96e2\u51e6\u7406<\/td>\u7551\u5730\u8fb2\u696d\uff0cNo.561, pp.1-6(2005).<\/td><\/tr>
\u2026<\/td> <\/td>Physica C : 5 papers<\/td> <\/td><\/tr>
347<\/td>B<\/td>Bi2Sr2CaCu2Oy single crystal growth in Bridgman-Stockbarger method using different oxygen partial pressure<\/td>Physica C, Vol.445-448, pp,455-458 (2006).<\/td><\/tr>
348<\/td>B<\/td>Fabrication of Bi2Sr2Can-1CunOy\/Al2O3-particles on MgO films by rf magnetron sputtering method<\/td>Advances in Science and Technology, Vol.47, pp.159-164 (2006).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
354<\/td>B<\/td>Preparation of Bi2Sr2Can-1CunOy tapes on various metals by chemical solution deposition<\/td>Physica C, Vol.445-448, pp.730-732 (2006).<\/td><\/tr>
355<\/td>B<\/td>Bi2Sr2CaCu2Oy single crystal growth in Bridgman-Stockbarger method using different oxygen partial pressure<\/td>Physica C, Vol.445-448, pp.455-458 (2006).<\/td><\/tr>
356<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u9ad8\u901f\u30d5\u30fc\u30ea\u30a8\u5909\u63db\u524d\u51e6\u7406\u6cd5\u306b\u304a\u3051\u308b\u6307\u7d0b\u7167\u5408\u30b7\u30b9\u30c6\u30e0\u306e\u69cb\u7bc9<\/td>\u4fe1\u5b66\u6280\u5831\uff0c(IEICE Technical Report ), NC2005-166(2006-3), pp.91-96.<\/td><\/tr>
357<\/td>C<\/td>\u97f3\u58f0\u306b\u3088\u308b\u500b\u4eba\u8a8d\u8a3c\u30b7\u30b9\u30c6\u30e0\u306e\u69cb\u7bc9<\/td>\u4fe1\u5b66\u6280\u5831\uff0c(IEICE Technical Report ), NC2006-208(2007-3), pp.119-123.<\/td><\/tr>
358<\/td>B<\/td>Superconducting characterization of Ni\/Bi2Sr2Ca2Cu3Oy superconductors<\/td>Physica C, Vol.463-465, pp.942-944(2007).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
373<\/td>B<\/td>Synchrotron radiation x-ray photoemission spectroscopy and high-resolution transmission electron microscopy analysis of Bi2Sr2Can1CunOy superconducting whiskers with high critical current density<\/td>Virtual Journal of Applications of Superconductivity (Vol.17 Iss.9 November 1 2009\uff1aJ. Appl. Phys. Vol.106 pp.083907(1-3))\uff0cVirtual Journal of Nanoscale Science & Technology(Vol.20 Iss.18 Novemver 2(2009)\uff1aJ. Appl. Phys., Vol.106 pp.083907(1-3).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
376<\/td>B<\/td>Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate<\/td>Thin Solid Films, Vol.519, pp.1525-1529(2010)..<\/td><\/tr>
377<\/td> <\/td>Ga doped ZnO thin films prepared by RF plasma assisted DC magnetron suttering under reductive atmosphere without heating substrates<\/td>Phys. Status Solidi C, Vol.7, No. 6, pp.1559-1561 (2010).<\/td><\/tr>
378<\/td> <\/td>Analysis on resistive switching of resistive random access memory using visualization technique of data storage area with secondary electron image<\/td>Advances in Science and Technology, Vol.75, p.49(2010).<\/td><\/tr>
379<\/td> <\/td>Mechanism of Resistive Memory Effect in Ga Doped ZnO Thin Films<\/td>Phys. Status Solidi C, Vol.7, No. 6, p.1712(2010).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
386<\/td> <\/td>Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films<\/td>Appl. Phys. Lett., Vol.96, p.143506(2010).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
391<\/td> <\/td>Enhancement of Intragrain Critical Current Density in Bi-based Superconductor by Self-Assembled Two-Dimensional Nanoplane Defects<\/td>IEEE Trans. Appl. Superconductor.<\/td><\/tr>
392<\/td> <\/td>Precise Analysis of Bi2Sr2Can-1CunOy Superconducting Whiskers by SR-XPS and HR-TEM<\/td>Materials Science and Engineering<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
415<\/td> <\/td>\u56de\u8def\u30d1\u30bf\u30fc\u30f3\u3092\u6709\u3059\u308b\u96fb\u6975\u4f53\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u98582011-84216\uff0c\u7279\u8a31\u7b2c5690635\u53f7<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
420<\/td>D<\/td>Introduction of TEDREC and research topics<\/td>2nd APTECS (International Seminar on Applied Technology Science and Arts) Institute Technology Sepuluh Nopember ITS-Surabaya Jawa, Timur, Indonesia, Dec.21-22, 2010.<\/td><\/tr>
421<\/td> <\/td>Electrical and Mechanical characterization of BaTiO3\/Pt freestanding films<\/td>20th MRS-Japan academic symposium Yokohama Japan December 20 – 22, 2010.<\/td><\/tr>
422<\/td> <\/td>Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)<\/td>physica status solidi c, Vol.8, No.2, pp.546-548(2011).<\/td><\/tr>
423<\/td> <\/td>Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+\u03b4 bulk single crystal<\/td>J. APPLIED PHYSICS, 110, 084506 (2011).<\/td><\/tr>
424<\/td> <\/td>Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet<\/td>Solid-State Electronics Vol.58 pp.48 -53 (2011).<\/td><\/tr>
425<\/td> <\/td>Analysis on Data Storage Area of NiO-ReRAM with Secondary Electron Image<\/td>J. Appl. Phys. Vol.110, pp.064503-1\uff5e064503-5(2011).<\/td><\/tr>
426<\/td> <\/td>Correlation between Resistance-change Effect in Transition-metal Oxides and Secondary-electron Contrast of SEM Images<\/td>J. Appl. Phys. Vol.110, pp.064503-1\uff5e064503-5(2011).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
430<\/td> <\/td>Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate<\/td>Thin Solid Films, Vol.519, pp.1525-1529(2010)..<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
433<\/td>D<\/td>\u96fb\u6c17\u914d\u7dda\u7528PVC\u306e\u9ad8\u6e29\u9818\u57df\u306b\u304a\u3051\u308b\u7a7a\u9593\u96fb\u8377\u5f62\u6210\u3068\u7d76\u7e01\u7834\u58ca<\/td>\u96fb\u5b66\u8ad6A, Vol.132, No.6, pp.\u25cb-\u25cb(2011) .<\/td><\/tr>
434<\/td>B<\/td>\u9285\u9178\u5316\u7269\u9ad8\u6e29\u8d85\u4f1d\u5c0e\u4f53\u5358\u7d50\u6676\u3092\u7528\u3044\u305f\u62b5\u6297\u5909\u5316\u30e1\u30e2\u30ea\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u30e1\u30ab\u30cb\u30ba\u30e0<\/td>\u8868\u9762\u79d1\u5b66Vol. 32, No. 7, pp. 428-432, 2011.<\/td><\/tr>
435<\/td>B<\/td>\u9077\u79fb\u91d1\u5c5e\u9178\u5316\u7269\u306b\u304a\u3051\u308b\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u73fe\u8c61\u3068\u4e8c\u6b21\u96fb\u5b50\u653e\u51fa\u52b9\u7387\u3068\u306e\u76f8\u95a2\u95a2\u4fc2<\/td>\u8868\u9762\u79d1\u5b66,\u3000Vol.32, No7,pp.422-427, 2011<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
438<\/td>D<\/td>\u7d2b\u5916\u5149\u7167\u5c04PVC\u306e\u9ad8\u6e29\u7d76\u7e01\u7834\u58ca\u7279\u6027\u3068\u7a7a\u9593\u96fb\u8377\u5f62\u6210<\/td>\u96fb\u5b66\u8ad6,A\uff0c Vol.132, No.9, pp.780-789(2011)<\/td><\/tr>
439<\/td>D<\/td>\u9577\u6642\u9593\u52a0\u71b1\u3057\u305fPVC\u306e\u9ad8\u6e29\u9818\u57df\u3067\u306e\u7a7a\u9593\u96fb\u8377\u5f62\u6210\u3068\u7d76\u7e01\u7834\u58ca<\/td>\u96fb\u5b66\u8ad6A, Vol.132, No.11, pp.\u25cb-\u25cb(2011) .<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
442<\/td>C<\/td>\u80f8\u90e8X\u7dda\u753b\u50cf\u306e\u7570\u5e38\u691c\u51fa\u30b7\u30b9\u30c6\u30e0\u306e\u6027\u80fd\u306b\u53ca\u307c\u3059\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u306e\u5165\u529b\u5c64\u30e6\u30cb\u30c3\u30c8\u6570\u306e\u5f71\u97ff<\/td>\u753b\u50cf\u96fb\u5b50\u5b66\u4f1a\u8a8c, Vol.41, No.1, pp.43-51(2012).<\/td><\/tr>
443<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u80ba\u91ceX\u7dda\u50cf\u306e\u7570\u5e38\u9670\u5f71\u691c\u51fa\u30b7\u30b9\u30c6\u30e0\u306e\u9ad8\u6027\u80fd\u5316<\/td>Journal of Signal Processing, Vol.16, No.1, pp.45-55(2012) .<\/td><\/tr>
444<\/td>C<\/td>Ensemble Learning in Systems of Neural Networks for Detection of Abnormal Shadows from X-ray Images of Lungs<\/td>Journal of Signal Processing, Vol.16, No.4, pp.343-346, 2012.<\/td><\/tr>
445<\/td>B<\/td>Developmental Mechanism for the Memory Effect in Perovskite Oxide-Based ReRAM Consisting of Bi2Sr2CaCu2O8+\u03b4 Bulk Single Crystal<\/td>Procedia Engineering, Vol.36, pp.411-418(2012)<\/td><\/tr>
446<\/td>B<\/td>Micro-Fabrication Method of Josephson Junctions without Etching Process<\/td>Procedia Engineering, Vol.36, pp.534-539(2012).<\/td><\/tr>
447<\/td>D<\/td>\u7a92\u7d20\u30ea\u30d5\u30ed\u30fc\u7089\u5316\u8a2d\u5099<\/td>\u7279\u98582008-108493, \u7279\u8a31\u8a3c(\u7279\u8a31\u7b2c4902588\u53f7)<\/td><\/tr>
448<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u6307\u7d0b\u8a8d\u8a3c\u30b7\u30b9\u30c6\u30e0\u69cb\u7bc9\u3068\u6027\u80fd\u8a55\u4fa1<\/td>Journal of Signal Processing, Vol.17, No.1, pp.1-9(2012).<\/td><\/tr>
449<\/td>B<\/td>HfO2-CB-RAM\u306e\u57fa\u672c\u30e1\u30e2\u30ea\u7279\u6027<\/td>\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u8ad6\u6587\u8a8c2012\u5e743\u6708\u53f7\u548c\u6587C\u5206\u518a<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
456<\/td>B<\/td>Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides<\/td>AIP Advances, Vol.2, pp.022141-1-022141-6(2012).<\/td><\/tr>
457<\/td>B<\/td>Resistive switching by migration of hydrogen ions<\/td>Appl. Phys. Lett., Vol.101, pp.043507-1-043507-4(2012).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
459<\/td>B<\/td>Insight Into Distribution and Switching of Resistive Random-Access Memory Filaments Based on Analysis of Variations in Memory Characteristics<\/td>J. Appl. Physics, Vol.112, No.4, August, pp.044503-1\uff5e044503-4, 2012<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
461<\/td>B<\/td>BaTiO3 \u8584\u819c\u306e\u81ea\u7acb\u5316\u306b\u4f34\u3046\u7279\u6027\u5909\u5316<\/td>Journal of the Vacuum Society of Japan, Vol.55, No.8, pp.399-402(2013).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
463<\/td>B<\/td>\u62b5\u6297\u5909\u5316\u578b\u4e0d\u63ee\u767a\u6027\u534a\u5c0e\u4f53\u8a18\u61b6\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u98582012-248747<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
470<\/td>B<\/td>Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides<\/td>ECS Transactions, Vol. 50, No. 34, pp. 55-60 (2013).<\/td><\/tr>
471<\/td>C<\/td>\u30ce\u30a4\u30ba\u3092\u542b\u3080\u5165\u529b\u30d1\u30bf\u30fc\u30f3\u304c\u30a2\u30f3\u30b5\u30f3\u30d6\u30eb\u5b66\u7fd2\u3092\u6301\u3064\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u30b7\u30b9\u30c6\u30e0\u306e\u6c4e\u5316\u80fd\u529b\u306b\u4e0e\u3048\u308b\u5f71\u97ff<\/td>\u4fe1\u5b66\u6280\u5831, \u30cb\u30e5\u30fc\u30ed\u30b3\u30f3\u30d4\u30e5\u30fc\u30c6\u30a3\u30f3\u30b0\uff0cVol.113, No.343, pp.71-74, 2013.<\/td><\/tr>
472<\/td>B<\/td>Memory Characteristics of Filament Confined in Tiny ReRAM Structure<\/td>MRS, Mater. Res. Soc. Symp. Proc., Vol.1562, mrss13-1562-dd15-06 (2013).<\/td><\/tr>
473<\/td>B<\/td>Physical Properties Elucidation of Filaments in -Conducting-Bridge Random Access Memory\u201d<\/td>ECS Transactions, Vol. 50, No. 34, pp. 61-67 (2013).<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
480<\/td>B<\/td>\u5c0e\u96fb\u6027\u30d6\u30ea\u30c3\u30b8\u30e1\u30e2\u30ea\u88c5\u7f6e\u53ca\u3073\u540c\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u98582013-178124<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
483<\/td>D<\/td>\u8a2d\u7f6e\uff15\u5e74\u6210\u679c\u3092\u4e16\u754c\u3078<\/td>\u671d\u65e5\u65b0\u805e\uff0c32\u9762\uff0c2013\u5e7410\u67089\u65e5\u63b2\u8f09<\/td><\/tr>
484<\/td>B<\/td>RF\u30de\u30b0\u30cd\u30c8\u30ed\u30f3\u30b9\u30d1\u30c3\u30bf\u30ea\u30f3\u30b0\u6cd5\u306b\u3088\u308bBaTiO3\u8584\u819c\u306e\u4f4e\u6e29\u5806\u7a4d\u3068\u8a55\u4fa1<\/td>Journal of the Vacuum Society of Japan, Vol. 56, No. 10, pp. 417-421 (2013).<\/td><\/tr>
485<\/td>D<\/td>\u5de5\u5b66\u90e8\u9644\u5c5e\u96fb\u5b50\u30c7\u30a3\u30b9\u30d7\u30ec\u30a4\u7814\u7a76\u30bb\u30f3\u30bf\u30fc\uff08TEDREC\uff09\u306b\u3088\u308b\u4e16\u754c\u30c8\u30c3\u30d7\u30ec\u30d9\u30eb\u306e\u7814\u7a76\u6210\u679c\u3068\u5730\u57df\u7523\u696d\u306e\u6d3b\u6027\u5316<\/td>\u5cb8\u7530\u3000\u609f\uff1a\u9ce5\u53d6\u5927\u5b66\u5e83\u5831\u8a8c\u300cFU-MON\u98a8\u7d0b\u300d39\u5dfbp.9,2013\u5e7411\u6708\u53f7<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
492<\/td>B<\/td>\u56fa\u6709\u30b8\u30e7\u30bb\u30d5\u30bd\u30f3\u30c8\u30f3\u30cd\u30eb\u30c7\u30d0\u30a4\u30b9\u306e\u7c21\u6613\u4f5c\u88fd\u6cd5<\/td>\u7279\u98582009-079643, \u7279\u8a312014\u5e741\u670824\u65e5<\/td><\/tr>
493<\/td>D<\/td>\u5148\u7aef\u878d\u5408\u7814\u7a76\u30bb\u30f3\u30bf\u30fc\u8a2d\u7f6e-\u9ce5\u5927,\u7523\u696d\u6d3b\u6027\u5316\u3078<\/td>\u65e5\u672c\u6d77\u65b0\u805e\uff0c24\u9762\uff0c2014\u5e741\u670811\u65e5\u63b2\u8f09<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
495<\/td>C<\/td>\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u8a71\u8005\u8a8d\u8a3c\u30b7\u30b9\u30c6\u30e0\u306b\u304a\u3051\u308b\u30a2\u30f3\u30b5\u30f3\u30d6\u30eb\u5b66\u7fd2\u306e\u52b9\u679c<\/td>\u4fe1\u53f7\u51e6\u7406\u5b66\u4f1a\u8a8c, Vol.18, No.1, pp.29-38, 2014-0<\/td><\/tr>
496<\/td>D<\/td>\u5de5\u5b66\u90e8\u9644\u5c5e\u5148\u7aef\u878d\u5408\u7814\u7a76\u30bb\u30f3\u30bf\u30fc\uff08TiFREC\uff09\u8a2d\u7f6e\u8a18\u5ff5\u5f0f\u5178\u3092\u6319\u884c<\/td>\u9ce5\u53d6\u5927\u5b66\u5e83\u5831\u8a8c\u300cFU-MON\u98a8\u7d0b\u300d40\u5dfbp.16,2014\u5e742\u6708\u53f7<\/td><\/tr>
497<\/td>D<\/td>\u7523\u5b66\u9023\u643a\u5148\u7aef\u6280\u8853\u958b\u767a\u3078-\u5de5\u5b66\u90e8\u4ed8\u5c5e\u306e\u30bb\u30f3\u30bf\u30fc\u8a2d\u7f6e<\/td>\u8aad\u58f2\u65b0\u805e\uff0c30\u9762\uff0c2014\u5e742\u67086\u65e5\u63b2\u8f09<\/td><\/tr>
498<\/td>D<\/td>\u53d6\u308a\u7d44\u307f\u306e\u6210\u679c\u5831\u544a-\u9ce5\u53d6\u5de5\u9ad8\u8ab2\u984c\u7814\u7a76\u767a\u8868\u4f1a-<\/td>\u65e5\u672c\u6d77\u65b0\u805e\uff0c20\u9762\uff0c2014\u5e742\u670821\u65e5\u63b2\u8f09<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
502<\/td>B<\/td>Extremely small test cell structure for resistive random access memory(ReRAM) element with removable bottom electrode<\/td>Appl. Phys. Lett., Vol.104, pp.083518-1-083518-4(2014).<\/td><\/tr>
503<\/td>B<\/td>\u30da\u30ed\u30d6\u30b9\u30ab\u30a4\u30c8\u9178\u5316\u7269\u3078\u306e\u6c34\u7d20\u30a4\u30aa\u30f3\u5c0e\u5165\u306b\u3088\u3063\u3066\u8a98\u8d77\u3055\u308c\u308b\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u52b9\u679c\u306e\u767a\u73fe\u6a5f\u69cb<\/td>\u8868\u9762\u79d1\u5b66\uff0cVol.35, No.7, pp.356-360(2014)..<\/td><\/tr>
504<\/td>D<\/td>\u8a3a\u65ad\u51e6\u7406\u88c5\u7f6e\uff0c\u8a3a\u65ad\u51e6\u7406\u30b7\u30b9\u30c6\u30e0\uff0c\u8a3a\u65ad\u51e6\u7406\u65b9\u6cd5\uff0c\u8a3a\u65ad\u51e6\u7406\u30d7\u30ed\u30b0\u30e9\u30e0\u53ca\u3073\u30b3\u30f3\u30d4\u30e5\u30fc\u30bf\u8aad\u307f\u53d6\u308a\u53ef\u80fd\u306a\u8a18\u9332\u5a92\u4f53\uff0c\u4e26\u3073\u306b\uff0c\u5206\u985e\u51e6\u7406\u88c5\u7f6e<\/td>\u51fa\u9858\u756a\u53f713\/496,391\uff0c\u7279\u8a31\u756a\u53f78,798,345\uff0c\u7c73\u56fd\uff0c2014\u5e748\u67085\u65e5<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
510<\/td>B<\/td>\u4e0d\u63ee\u767a\u6027\u534a\u5c0e\u4f53\u8a18\u61b6\u88c5\u7f6e\u304a\u3088\u3073\u540c\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u98582010-195296\uff0c\u7279\u8a31\u7b2c5462114\u53f7<\/td><\/tr>
511<\/td>B<\/td>\u30b8\u30e7\u30bb\u30d5\u30bd\u30f3\u7d20\u5b50\u304a\u3088\u3073\u540c\u7d20\u5b50\u306e\u88fd\u9020\u65b9\u6cd5<\/td>\u7279\u98582011-065063\uff0c\u7279\u8a31\u7b2c5748519\u53f7\uff0c2015\u5e745\u670822\u65e5<\/td><\/tr>
512<\/td>B<\/td>Enhanced Stability of the HfO2 Electrolyte and Reduced Working Voltage of a CB-RAM by an Ionic Liquid<\/td>J. Materials Chemistry C, Vol.3, No.27, pp.6963-6969 (2015).<\/td><\/tr>
513<\/td>B<\/strong><\/td>The Soret Effect in Resistive Switching of Transition Metal Oxide Memory<\/td>ICMAT2015 & IUMRS-ICA2015\uff0cJune28-July03\uff0c2015\uff0cSuntec Singapore.<\/td><\/tr>
514<\/td>B<\/td>Improvement of Electrical Anisotropy in Bi-Based Superconductor by Mg Doping<\/td>ICMAT2015 & IUMRS-ICA2015\uff0cJune28-July03\uff0c2015\uff0cSuntec Singapore.<\/td><\/tr>
515<\/td>B<\/td>Studies on interface of Cu\/Al and Al\/SiO2\/Si<\/td>ICMAT2015 & IUMRS-ICA2015, Procedia Engineering, Vol.141, pp.144-151(2016)<\/td><\/tr>
516<\/td>D<\/td>\u5438\u7740\u88c5\u7f6e\u53ca\u3073\u5206\u6790\u88c5\u7f6e<\/td>\u7279\u98582015-134523\uff0c2015\u5e747\u67083\u65e5<\/td><\/tr>
517<\/td>D<\/td>\u5c0e\u96fb\u4f53\u30d1\u30bf\u30fc\u30f3\u306e\u5f62\u6210\u65b9\u6cd5<\/td>\u7279\u98582011-164291\uff0c\u7279\u8a31\u7b2c5792546\u53f7\uff0c2015\u5e748\u670814\u65e5<\/td><\/tr>
518<\/td>C<\/td>\u201d\u9ad8\u7cbe\u5ea6\u5316\u3059\u308b\u500b\u4eba\u8a8d\u8a3c\u6280\u8853\u6700\u524d\u7dda\u2015\u30cb\u30e5\u30fc\u30e9\u30eb\u30cd\u30c3\u30c8\u30ef\u30fc\u30af\u3092\u7528\u3044\u305f\u6b21\u4e16\u4ee3\u751f\u4f53\u8a8d\u8a3c\u6280\u8853\u2015\u201d<\/td>\u3231NTS\uff0c\u5206\u62c5\u30fb\u57f7\u7b46<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
520<\/td>C<\/td>Construction of Measurement Systems for Fatigue using Flicker Values<\/td>2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 2G-4, pp.426-430, 2015<\/td><\/tr>
521<\/td>C<\/td>Development of MTF Measurement Algorithm for CT Images with High Noise by a Radial Edge Method<\/td>2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 2F-4, pp.397-400, 2015<\/td><\/tr>
522<\/td>B<\/td>Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode<\/td>Scientific Reports, 12\/2015, 5:18442. pp.1-8.<\/td><\/tr>
523<\/td>B<\/td>Ar\u30ac\u30b9\u30af\u30e9\u30b9\u30bf\u30fc\u30a4\u30aa\u30f3\u30d3\u30fc\u30e0\u306b\u3088\u308bBaTiO3\u5358\u7d50\u6676\u306e\u8868\u9762\u6e05\u6d44\u5316\u3068XPS\u6e2c\u5b9a<\/td>Journal of Surface Analysis, Vol.22, No.2, pp.103-109(2015)..<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
525<\/td>B<\/td>Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory<\/td>APPLIED PHYSICS LETTERS 108, 123501 (2016)<\/td><\/tr>
526<\/td>B<\/td>Improved performance of a conducting-bridge random access memory using ionic liquid<\/td>J. Materials Chemistry C, Vol.4, pp.7215-7222 (2016)<\/td><\/tr>
527<\/td>B<\/td>Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results<\/td>MRS Advanced Materials, Vol.461, pp.1-6(2016).<\/td><\/tr>
 <\/td>B<\/td>Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results<\/td>MRS Advances, 2016, DOI: 10.1557\/adv.2016.461.<\/td><\/tr>
\u2026<\/td> <\/td> <\/td> <\/td><\/tr>
546<\/td>C<\/td>\u751f\u4f53\u60c5\u5831\u3092\u7528\u3044\u305f\u75b2\u52b4\u306e\u8a08\u6e2c<\/td>BIO Clinica 34(14), 2019 (1467), pp.70-73.<\/td><\/tr>
 <\/td> <\/td> <\/td> <\/td><\/tr>
 <\/td> <\/td> <\/td> <\/td><\/tr>
 <\/td>   <\/td>Researchgate.net\/profile\/SatoruKishida\/stats ResearchGate\u00a0\u00a0 July 18, 2023
Research Interest Score \u00a0: \u00a0470.2
Reads\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 \u00a0 :\u00a0 6,966
Citations\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 \u00a0 :\u00a0 1,382<\/td>		PhD. Principal investigator at Tottori University<\/td><\/tr><\/tbody><\/table><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"

List\u3000of reports, papers, and patents : Ph.D\u3000Satoru Kishida Main Research Theme (M.R.T.)   [A] : Crys … \u7d9a\u304d\u3092\u8aad\u3080 Research Achievement<\/span> →<\/span><\/a><\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-236","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/pages\/236","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=236"}],"version-history":[{"count":5,"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/pages\/236\/revisions"}],"predecessor-version":[{"id":309,"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=\/wp\/v2\/pages\/236\/revisions\/309"}],"wp:attachment":[{"href":"https:\/\/www.skp-tirec.com\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=236"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}