Research Achievement

List of reports, papers, and patents : Ph.D Satoru Kishida

Main Research Theme (M.R.T.)  

[A] : Crystal-Growth and Solid State Physics in II-VI Compound, especially ZnS, ZnSe and so on.

[B] : Crystal-Growth, Devices-Fabrication and Surface-Analysis of High-Tc Superconducting Oxides and Re-RAM

[C] : Application of Neural Networks

[D] : Others

No.M.R.TTitle of Paper or ReportName of Journal, Vol., No., pp., Year
1ATemperature Dependence of the Half-Width of the 2.3eV Optical Absorption Band in Neutron-Irradiated ZnSphys. stat. sol. (a), Vol.35, pp.K57-K60(1976).  
2ANear-infrared emissions in additively colored or neutron-irradiated ZnSInst. Phys. Conf. Ser. No.31, 1977, pp.418-425.
   
8AOptical Absorption Bands in Neutron-Irradiated ZnSe and ZnS0.5Se0.5 Crystalsphys. stat. sol. (b) 113(1982)K31-K33.
   
13AThe Photosensitive Optical Absorption Bands in Zn-Treated and Neutron-Irradiated ZnSe Single Crystalsphys. stat. sol. (a) 95(1986)155-164.
   
19DCircuit for extension of an interrupt input of a personal computer PC8001mkIIRev. Sci. Instrum.  58(1987)142-143.
20AAnnealing of the F+-EPR Centers and the 2.3 and 2.9eV Optical Absorption Bands in Zinc Sulfide Crystalsphys. stat. sol. (b)  140(1987)347-354..
21ACorrelation between the 1.1 and 1.45eV Emission Bands and the F+Optical Absorption  Bands in ZnS Crystalsphys. stat. sol. (b)  143(1987)275-280.
22AOptical Bleaching of the F+Optical Bands in ZnS Crystalsphys. stat. sol. (b)  142(1987)617-627.
23AElectron-Irradiation Effects on the F+Bands and the Near-Infrared Emissions ZnS Crystalsphys. stat. sol. (b)  142(1987)K79-K83.
24AAnnealing Characteristics and Temperature Dependence of the Photosensitive 1.9eV  Absorption Bands in the Zn-Treated ZnSe  Crystalsphys. stat. sol. (a)  103(1987)613-618.
25ACross-Section for Atomic Displacement in II-VI Compounds by Gamma ParticlesRep. Fac. Engng. Tottori Univ. Vol.18, No.1(1987)47-54.
26AThe 2.5eV Emission Band in the Se-Treated ZnSe Crystalsphys. stat. sol. (a) 106(1988)283-289.
27AThe Transient Behaviors of the 2.5eV Emission Band in the Se-Treated ZnSe Crystalsphys. stat. sol. (a) 105(1988)K165-K168.
28ATemperature Dependence of the 2.5eV Emission Band in Se-Treated ZnSe Crystalsphys. stat. sol. (a) 109(1988) 617-623.
29BEffects of Water on the Resistance-Temperature Characteristics of YBa2Cu3O7-y   OxidesJpn. J. Appl. Phys.  Vol.27, (1988) L1616-L1619.
30BEffects of Preparation Conditions and Mechanical Polishings on the Superconducting  Behavior of High-Tc Oxide YBa2Cu3O7-yJpn. J. Appl. Phys.  Vol.27, (1988) L325-L328.
   
40BSurface Analysis of YBa2Cu3Ox and Bi-Sr-Ca-Cu-O Superconductors by Auger Electron SpectroscopyJpn. J. Appl. Phys. Vol.28(1989) L222-L225.
41BLEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal SurfacesJpn. J. Appl. Phys. Vol.28(1989) L406-408
   
45BXPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics SurfacesJpn. J. Appl. Phys. Vol.28, (1989) L949-L951.
   
47BLEED-AES Observations of 7K- and 80K-phase Bi-Sr-Ca-Cu-O Single CrystalsJpn. J. Appl. Phys. Vol.28, (1989) L1389-L1392.
48B酸化物高温超伝導体のXPSによる研究材料技術 7 巻 8 号(1989)287-293.
49Brf マグネトロンスパッタ法による Bi-Sr-Ca-Cu-O 薄膜のXPSによる研究真空 32 巻 11 号(1989)808-811.
50B酸化物超電導単結晶の製造方法特開平7-232997
51BTHE PREPARATION CONDITIONS AND CHARACTERISTICS OF THE Bi-Sr-Ca-Cu-O SINGLE CRYSTALSJ.Crystal Growth 99(1990) 937-941.
   
53BXPS Studies of 80K-Phase Bi-Sr-Ca-Cu-O Single CrystalsJpn. J. Appl. Phys. Vol.29(1990) L438-L440.
   
62BPREPARATION CONDITIONS OF 80K-PHASE Bi(Pb)-Sr-Ca-Cu-O SINGLE CRYSTALSProc. 3rd Int. Symposium on Super-conductivity (ISS’90), Nov. 6-9, 1990, Sendai, pp.781-784
   
66BLEED-AES OBSERVATIONS OF THE VACUUM-CLEAVED Bi-Sr-Ca-Cu-O SINGLE   CRYSTALSSurface Science 242(1991)50-53.
   
68BFORMATION OF INSULATING LAYERS ON 80K-PHASE Bi-BASED SINGLE  CRYSTALS3th FED WORKSHOP on HiTcSc-ED ( Reserach & Development for Future Electron  Devices, Kumamoto, 1991) pp.88-89.
69BTHE PREPARATION CONDITIONS OF THE FLAT 80K-PHASE Bi-Sr-Ca-Cu-O THIN FILMS BY RF MAGNETRON SPUTTERINGApplied Surface Science 48/49(1991)446-449.
70BSURFACE STUDY OF SINGLE CRYSTAL 80K Bi-Sr-Ca-Cu-O SUPERCONDUCTOR  WITH Si AND Nb BY RHEED AND XPS DEPTH PROFILEApplied Surface Science 48/49(1991) 450-453
71BSURFACE CHARACTERIZATIONS OF Bi-Sr-Ca-Cu-O THIN FILMS AND BULK  SINGLE CRYSTALSApplied Surface Science 48/49(1991) 425-429.
72BThe Preparations of 110K Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Ceramics  in Various Oxygen-Reduced Atmospheresphys. stat. sol. (a), 124(1991)K117-K121.
 *Physica C : 4 papers 
79BGROWTH OF 80K-PHASE (Bi,Pb)-(Sr,Ca)-Cu-O BULK SINGLE CRYSTALS USING  THE FLUX CONTAINING Li OR SbPhysica C 190(1991)110-110.
 *真空,Vol.34, No.3, 6 papers 
93BFormation of Au Electrodes on 80K-Phase Bi-Sr-Ca-Cu-O Single Crystal Surfaces and Their Characteristics by XPSIEICE TRANSACTIONS, Vol.E74, No.7(1991)1967-1971.
   
108BObservation of Josephson Junctionlike Behavior in Single-Crystal (Bi,Pb)2Sr2CaCu2OyJpn. J. Appl. Phys. Vol.31, No.7A (1992) pp.L829-L831
   
119BEffects of YBa2Cu3Oy Doping into Bi2Sr2CaCu2Ox on Superconducting Propertiesphys. stat. sol.(a)  Vol.137 (1993) pp.173-178.
   
125BPreparation of As-Deposited 80K-Phase Bi-Sr-Ca-Cu-O Films by RF Magnetron SputteringJpn. J. Appl. Phys. Vol.32, Suppl.32-3(1993), pp.700-702.
   
128BCrystal Growth of Bi-Sr-Ca-Cu-O (c0=39A) Single CrystalsJpn. J. Appl. Phys. Vol.32, Part 2, No.3B(1993)pp.L398-L399.
 6th ISS93 Proceedings : 5 papers 
139BEffects of Doping the Pb-Oxides into Bi-Sr-Ca-Cu-O SuperconductorsProc. of 6th ISS’93, Oct. 26-29, 1993, Hiroshima (Adv. in Supercon. VI), pp.343-346.
   
149C, Bニューロコンピューティングによる化学分析の知能化 -X線光電子分光分析への応用-表面科学 Vol.15, No.3(1994)pp.168-174.
   
163BEffects of the Preparation Conditions of Bi-Based Superconducting Ceramics on  Superconductivityphys. stat. sol.(a),  Vol.148,(1995)  pp.537-543.
164BEffects of Temperatures and Periods for Melting on Growth of Bi2Sr2CaCu2Oy Single CrystalsJ. Crystal Growth Vol.153(1995) pp.146-150.
165BEffects of Cooling Rates and Temperatures Ending the Growth on Bi2Sr2CaCu2Oy  Single Crystal Growthphys. stat. sol.(a)  Vol.151(1995) pp.17-22.
166BDeteriorated Layer Formed on Bi2Sr2CaCu2Oy  Single Crystal Surfacesphys. stat. sol.(a)  Vol.151(1995) pp.387-392.
   
181BBi2Sr2CaCu2Oy  単結晶の磁束量子観察Trans.IEE of Japan A, Vol.115, No.3 (1995)pp.207-212.
   
190B低速電子線回折及び高速電子線回折による固体表面の構造解析J. Surface Analysis, Vol.2, No.2, pp.229-235 (1996).
191BXPS法により評価した大気中加熱による系酸化物超伝導体の清浄化J. Surface Analysis,  Vol.2, No.2, pp.290 (1996).
   
199BEffects of He Gas Addition on the Production of Active Particles in rf Magnetron SputteringJpn. J. Appl. Phys.  Vol.35, Part1, No.6A, pp.3590-3594(1996).
200Cコホネン著「 自己組織化マップ 和訳シュプリンガー・フェアラーク東京,1996年6月15日,3800円
   
202BEffects of O2+  and O+ on the Growth of BiSrCaCuO Superconducting Films in rf Magnetron  SputteringJpn. J. Appl. Phys., Vol.35, Part 1, No.8A(1996)pp.4297-4301
203DArイオンソフトエッチング を用いた微細接続孔内の自然酸化膜除去効果真空, Vol.39, No.10, pp.497-503(1996).
204BEffects of Bi2Sr2CaCu2Oy Single Crystal Surfaces on Contact ResistanceJpn. J. Appl. Phys., Vol.35, Part 1, No.10(1996)pp.5299-5303.
205BBi-Sr-Ca-Cu酸化物超電導体へのPb酸化物添加効果低温工学,Vol.31, No.12(1996) pp.646-652.
206C汎化能力向上のための階層型ニューラルネットワークの条件付き付加項信学技報,Vol.NC96-173(1997) pp.139-144.
   
210BEffect of Preparation Conditions on the Growth of Bi-based Superconducting Single CrystalsPhysica C, Vol.282-287, pp.473-474 (1997).
211BGrowth of Bi2Sr2Can-1CunOy Single Crystals in Oxygen-Reduced AtmospheresPhysica C, Vol.282-287, pp.477-478 (1997).
212DCharacteristics of Sputtered TiN Films by Optimized Metallic Mode DepositionJpn. J. Appl. Phys., Vol.36, Part 1, No.2(1997) pp.556-600
   
218BGrowth of Bi2Sr2CaCu2Oy Single Crystals Using a Vertical Bridgman MethodJpn. J. Appl. Phys., Vol.36, Part 2, No.6B(1997)pp.L761-L763.
219B電子分光法による酸化シリコン測定時のダメージについて表面科学, Vol.18, No.8, pp.21-25(1997).
   
224BOptimum Growth Condition of Bi2Sr2CaCu2Oy  Single Crystals in a Vertical Bridgman MethodJ. Crystal Growth, Vol.192, pp.136-140(1998).
   
229BGrowth of Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman method and their characterizationJ. Crystal Growth, Vol.182, No.1-2, pp.60-64(1998).
230Cニューラルネットワークの定量分析への適用表面科学, Vol.19, No.2, pp.98-105(1998).
   
235BSurface of Bi2Sr2CaCu2Oy Single Crystals Heated in AirJpn. J. Appl. Phys., Vol.4, No.4A, pp.2024-2027(1998).
236BXPS Study of Junction Interface in In/BaRbBiO FilmsJpn. J. Appl. Phys., Vol.37, No.5A, pp.2482-2484(1998).
237Cニューラルネットワークの化学分析への適用表面科学, Vol.19, No.6, pp.46-54(1998).
   
246BGrowth of Bi2Sr2CaCu2Oy  by a Self-Flux Method Using PrecursorsJ. Crystal Growth, Vol.205, pp.284-288(1999).
247CGROWTH of Bi-BASED WHISKERS AND THEIR CHARACTERIZATIONSingapore J.Physics, Vol.15, No.1, 1999, pp.101-106.
   
253BSubmicron scale High-Tc superconducting stacks for single Cooper-pair tunnelingPhysica B, Vol.284-8, pp.1814-1815, 2000.
254BGrowth of large Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman methodJ. Crystal Growth, Vol.216, pp.220-224(2000).
   
259D垂直ブリッジマン法によるBi2Sr2CaCu2Oy単結晶の最適育成条件鳥取大学学報,第138号,pp.10-12(2000).  *鳥取大学・科学研究業績表彰
260D家族と過ごしたケンブリッジから…鳥取大学「葦」,第35号,pp.8-12(2000).
261C表面科学技術賞日本表面科学会
262BFabrication of Ultra-small and Long Intrinsic Josephson Junctions on Bi-2212 Single Crystal WhiskersIEEE Trans. On Applied Superconductivity, Vol.11, No.1, pp.948-951(2001).
263BGrowth of La-doped Bi2Sr2CaCu2Oy Single Crystals by a self-flux methodPhysica C , Vol.357-360, pp.716-718(2001).
264BX-ray photoelectron spectroscopy studies of La-doped Bi2Sr2CaCu2Oy Single CrystalsPhysica C,  Vol.357-360, pp.410-413(2001).
265BGrowth of Bi2Sr2CaCu2Oy Single Crystals By A Modified Vertical Bridgman MethodPhysica C , Vol.357-360, pp.722-725(2001).
266BAnnealing Characteristics of  Bi2Sr2CaCu2Oy Single Crystals Grown By A Vertical Bridgman MethodPhysica C , Vol.357-360, pp.821-823(2001).
267BGrowth of  Bi2Sr2CaCu2Oy Single Crystals By A Self-Flux MethodPhysica C , Vol.357-360, pp.719-721(2001).
268BGrowth of La-doped Bi2Sr2CaCu2Oy Single Crystals by a self-flux methodPhysica C , Vol.357-360, pp.716-718(2001).
269BTemperature Depenedence of the Surface Resistance of a Bi-Sr-Ca-Cu-O Whisker Measured by the Probe-Coupled Microstrip Resonator MethodJpn. J. Appl. Phys., Vol.40, pp.L669-671(2001).
270B超電導と環境問題鳥取大学・学務部だより, No.240, pp.4-6(2001).
271BGrowth of Bi2Sr2CaCu2Oy Superconducting WhiskersPhysica C, Vol.362, pp.195-199 (2001).
272BNew Approach for Farbricating Submicron Scale Intrinsic Josephson Junctions using High-Tc Superconducting MaterialsPhysica C, Vol.362, pp.150-155 (2001).
273BElectrical Properties of Bi-2212 Whisker Using Ag Film ElectrodesPhysica C , Vol.362, pp.333-337 (2001).
274BJunction area dependence of critical current density in Bi-2212 stacked junctionSupercond. Sci. Technol., Vol.14, pp.1102-1105 (2001).
275D鳥取大学 教育功績賞鳥取大学
276BEffect of in situ and ex situ annealing on the growth of Bi2Sr2Can-1CunOy sputtered filmsSupercond. Sci. Technol., Vol.15, pp.472-474 (2002).
277BGROWTH AND CHARACTERIZATION OF Bi-BASED SUPERCONDUCTING  WHISKERSSing. J. Phys., Vol.18, No.1, pp.255-259(2002).
278BPREPARATION OF Bi2Sr2Can-1CunOy SUPERCONDUCTING SPUTTERED FILMS USING HELIUM GASSing. J. Phys., Vol.18, No.1, pp.227-231(2002).
279BGrowth of La Doped Bi2Sr2CaCu2Oy Single Crystals by a Self-Flux MethodJ. Crystal Growth, Vol.237-239, pp.753-755 (2002)
280BGrowth of large Bi2Sr2CaCu2Oy single crystals by a modified vertical Bridgman methodJ. Crystal Growth, Vol.237-239, pp.749-752 (2002).
281BCHARACTERIZATIONS OF BI-BASED WHISKERS BY THE METHOD OF Al2O3-SEEDED GLASSY QUENCHED PLATELETSInternational Journal of Modern Physics B, Vol.16, No.20, pp.4497-4501(2002).
BPhysica C : 4 papers, Supercon. Sci. Technol., : 2 papers 
288CApplication of neural networks to braille transcriptionICONIP’02 (9th Int. Conf. on Neural Information Processing), Nov.18-22, 2002, Orchard Country Club, Singapore
288Cニューラルネットワークによる分かち書き信学技報,NC2001-139,p.53-58(2002-3).
290C点字変換システムへのニューラルネットワークの適用信学技報,DSP2002-20,p.19-23(2002-05).
291D環境のはなし ―鳥取発・地球再生の知恵―富士書店,2002年7月30日発行
   
296D人生を豊かにするために”(巻頭言)鳥取大学学務だより,No.246, 2003.
   
299B超伝導体ホイスカーの構造解析文部科学省ナノテクノロジー総合支援プロジェクト・平成14年度・実績報告書,pp.86-89,2003年
300BPreparation of Bi2Sr2Can-1CunOy superconducting films by a rf magnetron sputtering method with multi-targetsPhysica C, Vol.392-396, pp.1306-1309(2003).
301BXPS study on the Bi-2212 single crystals grown by a modified vertical Bridgman methodPhysica C, Vol.392-396, pp.153-156(2003).
302BEffect of atmospheres on characterization of Bi-based superconducting whiskersPhysica C, Vol.392-396, pp.508-511(2003).
303BGrowth mechanism of Bi-based superconducting whiskersPhysica C, Vol.392-396, pp.512-515(2003).
304BImprovement of superconductivity in Bi-2212 single crystals grown by a vertical Bridgman methodPhysica C, Vol.392-396, pp.505-507(2003).
   
307BGrowth of Phase-Controlled Bi2Sr2Can-1CunOy Thin Films Prepared by Off-Axis Sputtering using He GasJpn. J. Appl. Phys., Vol.42, pp.2671-2674(2003).
   
311Bナノデバイス用超伝導ウィスカーの化学状態分析文部科学省ナノテクノロジー総合支援プロジェクトSPring-8研究成果報告書,pp.105-107,2004.
312BChemical Properties of the Bi-based superconducting whiskers studied by X-ray photoelectron spectroscopyPhysica C, Vol.412-414, pp.279-282 (2004).
313BGrowth mechanism of Bi-based whiskers in a method of Al2O3-seeded quenched glassy plateletsPhysica C, Vol.408-410, pp.874-875 (2004).
314BPreparation of Bi-2223 Phase Superconducting Ceramics in Various Oxygen-reduced AtmospherePhysica C, Vol.408-410, pp.889-890 (2004).
315CEffects of Preprocessing and Layered Neural Networks on Individual IdentificationProc of the 47th IEEE International Midwest Symposium on Circuits and Systems (25-28 July, 2004, Hiroshima, Japan), pp. III-73 – III-76, 2004
316CApplication of Neural Networks to Japanese-to-Braille TranslationProc of the 47th IEEE International Midwest Symposium on Circuits and Systems (25-28 July, 2004, Hiroshima, Japan), pp. III-109 – III-112, 2004
317BPreparation of Bi2Sr2Can-1CunOy thick filmsPhysica C , Vol.412-414, pp.1358-1361(2004).
318BGrowth of high quality Bi2Sr2CaCu2Oy single crystals by modified vertical Bridgman methodPhysica C , Vol.412-414, pp.607-609(2004).
319BBi2Sr2Can-1CunOy thin films deposited using Bi-Sr-Cu-O and Ca-Cu-O targetsTransactions of the Materials Research Society of Japan, Vol.29, No.4, pp.1405-1408, 2004.
  Other 3 papers in the same Journal
324Cニューラルネットワークを用いた指紋照合システムの構築ニューロコンピューティング研究会(玉川大学),信学技報,NC2003-146,pp.65-70,2004年3月17日
325C点字翻訳へのニューラルネットワークの適用ニューロコンピューティング研究会(玉川大学),信学技報,NC2003-172,pp.43-48,2004年3月18日.
326Cニューラルネットワークを用いた指紋照合システム非線形問題研究会,信学技報,NLP2004-14~23,pp.1-4,2004年6月17日.
   
330D”例題で学ぶ電磁気学”分担執筆森北出版㈱
331CImprovement of Preprocessing Method on Fingerprint Identification System by Layered Neural NetworksInt. Workshop on Nonlinear Signal and Image Processing, (NSIP 2005), pp.217-220(2005).
332BDeposition of Bi2Sr2Can-1CunOy (Bi-based) Superconducting Thin Films by rf Magnetron Sputtering Method Under External Magnetic FieldIEEE Trans on Applied Superconductivity, Vol.15, No.2, pp.3074-3077(2005).
333BEnlargement Effect of the Crucible Size on Bi2Sr2CaCu2Oy Single Crystals Grown by a Modified Vertical Bridgman MethodIEEE Trans on Applied Superconductivity, Vol.15, No.2, pp.3133-3136(2005).
334D電気電子工学科における教育改革工業教育,Vol.53, No.3, pp.81-86(2005)
335D磁気シード法による赤土濁水の固液分離処理畑地農業,No.561, pp.1-6(2005).
 Physica C : 5 papers 
347BBi2Sr2CaCu2Oy single crystal growth in Bridgman-Stockbarger method using different oxygen partial pressurePhysica C, Vol.445-448, pp,455-458 (2006).
348BFabrication of Bi2Sr2Can-1CunOy/Al2O3-particles on MgO films by rf magnetron sputtering methodAdvances in Science and Technology, Vol.47, pp.159-164 (2006).
   
354BPreparation of Bi2Sr2Can-1CunOy tapes on various metals by chemical solution depositionPhysica C, Vol.445-448, pp.730-732 (2006).
355BBi2Sr2CaCu2Oy single crystal growth in Bridgman-Stockbarger method using different oxygen partial pressurePhysica C, Vol.445-448, pp.455-458 (2006).
356Cニューラルネットワークを用いた高速フーリエ変換前処理法における指紋照合システムの構築信学技報,(IEICE Technical Report ), NC2005-166(2006-3), pp.91-96.
357C音声による個人認証システムの構築信学技報,(IEICE Technical Report ), NC2006-208(2007-3), pp.119-123.
358BSuperconducting characterization of Ni/Bi2Sr2Ca2Cu3Oy superconductorsPhysica C, Vol.463-465, pp.942-944(2007).
   
373BSynchrotron radiation x-ray photoemission spectroscopy and high-resolution transmission electron microscopy analysis of Bi2Sr2Can1CunOy superconducting whiskers with high critical current densityVirtual Journal of Applications of Superconductivity (Vol.17 Iss.9 November 1 2009:J. Appl. Phys. Vol.106 pp.083907(1-3)),Virtual Journal of Nanoscale Science & Technology(Vol.20 Iss.18 Novemver 2(2009):J. Appl. Phys., Vol.106 pp.083907(1-3).
   
376BEffect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrateThin Solid Films, Vol.519, pp.1525-1529(2010)..
377 Ga doped ZnO thin films prepared by RF plasma assisted DC magnetron suttering under reductive atmosphere without heating substratesPhys. Status Solidi C, Vol.7, No. 6, pp.1559-1561 (2010).
378 Analysis on resistive switching of resistive random access memory using visualization technique of data storage area with secondary electron imageAdvances in Science and Technology, Vol.75, p.49(2010).
379 Mechanism of Resistive Memory Effect in Ga Doped ZnO Thin FilmsPhys. Status Solidi C, Vol.7, No. 6, p.1712(2010).
   
386 Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin filmsAppl. Phys. Lett., Vol.96, p.143506(2010).
   
391 Enhancement of Intragrain Critical Current Density in Bi-based Superconductor by Self-Assembled Two-Dimensional Nanoplane DefectsIEEE Trans. Appl. Superconductor.
392 Precise Analysis of Bi2Sr2Can-1CunOy Superconducting Whiskers by SR-XPS and HR-TEMMaterials Science and Engineering
   
415 回路パターンを有する電極体およびその製造方法特願2011-84216,特許第5690635号
   
420DIntroduction of TEDREC and research topics2nd APTECS (International Seminar on Applied Technology Science and Arts) Institute Technology Sepuluh Nopember ITS-Surabaya Jawa, Timur, Indonesia, Dec.21-22, 2010.
421 Electrical and Mechanical characterization of BaTiO3/Pt freestanding films20th MRS-Japan academic symposium Yokohama Japan December 20 – 22, 2010.
422 Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)physica status solidi c, Vol.8, No.2, pp.546-548(2011).
423 Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystalJ. APPLIED PHYSICS, 110, 084506 (2011).
424 Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheetSolid-State Electronics Vol.58 pp.48 -53 (2011).
425 Analysis on Data Storage Area of NiO-ReRAM with Secondary Electron ImageJ. Appl. Phys. Vol.110, pp.064503-1~064503-5(2011).
426 Correlation between Resistance-change Effect in Transition-metal Oxides and Secondary-electron Contrast of SEM ImagesJ. Appl. Phys. Vol.110, pp.064503-1~064503-5(2011).
   
430 Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrateThin Solid Films, Vol.519, pp.1525-1529(2010)..
   
433D電気配線用PVCの高温領域における空間電荷形成と絶縁破壊電学論A, Vol.132, No.6, pp.○-○(2011) .
434B銅酸化物高温超伝導体単結晶を用いた抵抗変化メモリのスイッチングメカニズム表面科学Vol. 32, No. 7, pp. 428-432, 2011.
435B遷移金属酸化物における抵抗スイッチング現象と二次電子放出効率との相関関係表面科学, Vol.32, No7,pp.422-427, 2011
   
438D紫外光照射PVCの高温絶縁破壊特性と空間電荷形成電学論,A, Vol.132, No.9, pp.780-789(2011)
439D長時間加熱したPVCの高温領域での空間電荷形成と絶縁破壊電学論A, Vol.132, No.11, pp.○-○(2011) .
   
442C胸部X線画像の異常検出システムの性能に及ぼすニューラルネットワークの入力層ユニット数の影響画像電子学会誌, Vol.41, No.1, pp.43-51(2012).
443Cニューラルネットワークを用いた肺野X線像の異常陰影検出システムの高性能化Journal of Signal Processing, Vol.16, No.1, pp.45-55(2012) .
444CEnsemble Learning in Systems of Neural Networks for Detection of Abnormal Shadows from X-ray Images of LungsJournal of Signal Processing, Vol.16, No.4, pp.343-346, 2012.
445BDevelopmental Mechanism for the Memory Effect in Perovskite Oxide-Based ReRAM Consisting of Bi2Sr2CaCu2O8+δ Bulk Single CrystalProcedia Engineering, Vol.36, pp.411-418(2012)
446BMicro-Fabrication Method of Josephson Junctions without Etching ProcessProcedia Engineering, Vol.36, pp.534-539(2012).
447D窒素リフロー炉化設備特願2008-108493, 特許証(特許第4902588号)
448Cニューラルネットワークを用いた指紋認証システム構築と性能評価Journal of Signal Processing, Vol.17, No.1, pp.1-9(2012).
449BHfO2-CB-RAMの基本メモリ特性電子情報通信学会論文誌2012年3月号和文C分冊
   
456BCorrelation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxidesAIP Advances, Vol.2, pp.022141-1-022141-6(2012).
457BResistive switching by migration of hydrogen ionsAppl. Phys. Lett., Vol.101, pp.043507-1-043507-4(2012).
   
459BInsight Into Distribution and Switching of Resistive Random-Access Memory Filaments Based on Analysis of Variations in Memory CharacteristicsJ. Appl. Physics, Vol.112, No.4, August, pp.044503-1~044503-4, 2012
   
461BBaTiO3 薄膜の自立化に伴う特性変化Journal of the Vacuum Society of Japan, Vol.55, No.8, pp.399-402(2013).
   
463B抵抗変化型不揮発性半導体記憶装置の製造方法特願2012-248747
   
470BPulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-OxidesECS Transactions, Vol. 50, No. 34, pp. 55-60 (2013).
471Cノイズを含む入力パターンがアンサンブル学習を持つニューラルネットワークシステムの汎化能力に与える影響信学技報, ニューロコンピューティング,Vol.113, No.343, pp.71-74, 2013.
472BMemory Characteristics of Filament Confined in Tiny ReRAM StructureMRS, Mater. Res. Soc. Symp. Proc., Vol.1562, mrss13-1562-dd15-06 (2013).
473BPhysical Properties Elucidation of Filaments in -Conducting-Bridge Random Access Memory”ECS Transactions, Vol. 50, No. 34, pp. 61-67 (2013).
   
480B導電性ブリッジメモリ装置及び同装置の製造方法特願2013-178124
   
483D設置5年成果を世界へ朝日新聞,32面,2013年10月9日掲載
484BRFマグネトロンスパッタリング法によるBaTiO3薄膜の低温堆積と評価Journal of the Vacuum Society of Japan, Vol. 56, No. 10, pp. 417-421 (2013).
485D工学部附属電子ディスプレイ研究センター(TEDREC)による世界トップレベルの研究成果と地域産業の活性化岸田 悟:鳥取大学広報誌「FU-MON風紋」39巻p.9,2013年11月号
   
492B固有ジョセフソントンネルデバイスの簡易作製法特願2009-079643, 特許2014年1月24日
493D先端融合研究センター設置-鳥大,産業活性化へ日本海新聞,24面,2014年1月11日掲載
   
495Cニューラルネットワークを用いた話者認証システムにおけるアンサンブル学習の効果信号処理学会誌, Vol.18, No.1, pp.29-38, 2014-0
496D工学部附属先端融合研究センター(TiFREC)設置記念式典を挙行鳥取大学広報誌「FU-MON風紋」40巻p.16,2014年2月号
497D産学連携先端技術開発へ-工学部付属のセンター設置読売新聞,30面,2014年2月6日掲載
498D取り組みの成果報告-鳥取工高課題研究発表会-日本海新聞,20面,2014年2月21日掲載
   
502BExtremely small test cell structure for resistive random access memory(ReRAM) element with removable bottom electrodeAppl. Phys. Lett., Vol.104, pp.083518-1-083518-4(2014).
503Bペロブスカイト酸化物への水素イオン導入によって誘起される抵抗スイッチング効果の発現機構表面科学,Vol.35, No.7, pp.356-360(2014)..
504D診断処理装置,診断処理システム,診断処理方法,診断処理プログラム及びコンピュータ読み取り可能な記録媒体,並びに,分類処理装置出願番号13/496,391,特許番号8,798,345,米国,2014年8月5日
   
510B不揮発性半導体記憶装置および同装置の製造方法特願2010-195296,特許第5462114号
511Bジョセフソン素子および同素子の製造方法特願2011-065063,特許第5748519号,2015年5月22日
512BEnhanced Stability of the HfO2 Electrolyte and Reduced Working Voltage of a CB-RAM by an Ionic LiquidJ. Materials Chemistry C, Vol.3, No.27, pp.6963-6969 (2015).
513BThe Soret Effect in Resistive Switching of Transition Metal Oxide MemoryICMAT2015 & IUMRS-ICA2015,June28-July03,2015,Suntec Singapore.
514BImprovement of Electrical Anisotropy in Bi-Based Superconductor by Mg DopingICMAT2015 & IUMRS-ICA2015,June28-July03,2015,Suntec Singapore.
515BStudies on interface of Cu/Al and Al/SiO2/SiICMAT2015 & IUMRS-ICA2015, Procedia Engineering, Vol.141, pp.144-151(2016)
516D吸着装置及び分析装置特願2015-134523,2015年7月3日
517D導電体パターンの形成方法特願2011-164291,特許第5792546号,2015年8月14日
518C”高精度化する個人認証技術最前線―ニューラルネットワークを用いた次世代生体認証技術―”㈱NTS,分担・執筆
   
520CConstruction of Measurement Systems for Fatigue using Flicker Values2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 2G-4, pp.426-430, 2015
521CDevelopment of MTF Measurement Algorithm for CT Images with High Noise by a Radial Edge Method2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 2F-4, pp.397-400, 2015
522BFinding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom ElectrodeScientific Reports, 12/2015, 5:18442. pp.1-8.
523BArガスクラスターイオンビームによるBaTiO3単結晶の表面清浄化とXPS測定Journal of Surface Analysis, Vol.22, No.2, pp.103-109(2015)..
   
525BInfluence of ultraviolet irradiation on data retention characteristics in resistive random access memoryAPPLIED PHYSICS LETTERS 108, 123501 (2016)
526BImproved performance of a conducting-bridge random access memory using ionic liquidJ. Materials Chemistry C, Vol.4, pp.7215-7222 (2016)
527BFormation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental ResultsMRS Advanced Materials, Vol.461, pp.1-6(2016).
 BFormation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental ResultsMRS Advances, 2016, DOI: 10.1557/adv.2016.461.
   
546C生体情報を用いた疲労の計測BIO Clinica 34(14), 2019 (1467), pp.70-73.
    
    
    Researchgate.net/profile/SatoruKishida/stats ResearchGate   July 18, 2023
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PhD. Principal investigator at Tottori University